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description the a132x family of linear hall-effect sensors are optimized, sensitive, and temperature-stable. these ratiometric hall-effect sensors provide a voltage output that is proportional to the applied magnetic field. the a132x family has a quiescent output voltage that is 50% of the supply voltage and output sensitivity options of 2.5mv/g, 3.125mv/g, and 5mv/g. the features of this family of devices are ideal for use in the harsh environments found in automotive and industrial linear and rotary position sensing systems. each device has a bicmos monolithic circuit which integrates a hall element, improved temperature-compensating circuitry to reduce the intrinsic sensitivity drift of the hall element, a small-signal high-gain amplifier, and a rail-to-rail low- impedance output stage. a proprietary dynamic offset cancellation technique, with an internal high-frequency clock, reduces the residual offset voltage normally caused by device overmolding, temperature dependencies, and thermal stress. the high frequency clock allows for a greater sampling rate, which results in higher accuracy and faster signal processing capability. this technique produces devices that have an extremely stable quiescent output voltage, are immune to mechanical stress, and have precise a1321-ds, rev. 8 features and benefits ? temperature-stable quiescent output voltage ? precise recoverability after temperature cycling ? output voltage proportional to magnetic flux density ? ratiometric rail-to-rail output ? improved sensitivity ? 4.5 to 5.5 v operation ? immunity to mechanical stress ? solid-state reliability ? robust emc protection ratiometric linear hall effect sensor for high-temperature operation functional block diagram not to scale packages: 3 pin sot23w (suffix lh), and 3 pin sip (suffix ua) a1321, a1322, and a1323 continued on the next page? amp gnd vout vcc out offset trim control gain 0.1 f v+ dynamic offset cancellation filter
recoverability after temperature cycling. having the hall element and an amplifier on a single chip minimizes many problems normally associated with low-level analog signals. output precision is obtained by internal gain and offset trim adjustments made at end-of-line during the manufacturing process. the a132x family is provided in a 3-pin single in-line package (ua) and a 3-pin surface mount package (lh). each package is available in a lead (pb) free version (suffix, ?t) , with a 100% matte tin plated leadframe. description (continued) ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 2 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com selection guide part number pb-free 1 packing 2 mounting ambient, t a (oc) sensitivity, typ. (mv/g) a1321elhlt-t yes 7-in. reel, 3000 pieces/reel surface mount ?40 to 85 5.000 a1321eua-t yes bulk, 500 pieces/bag sip through hole a1321llhlt-t yes 7-in. reel, 3000 pieces/reel surface mount ?40 to 150 a1321lua-t yes bulk, 500 pieces/bag sip through hole a1322elhlt-t yes 7-in. reel, 3000 pieces/reel surface mount ?40 to 85 3.125 a1322eua-t yes bulk, 500 pieces/bag sip through hole a1322llhlt-t yes 7-in. reel, 3000 pieces/reel surface mount ?40 to 150 a1322lua-t yes bulk, 500 pieces/bag sip through hole A1323ELHLT-T yes 7-in. reel, 3000 pieces/reel surface mount ?40 to 85 2.500 a1323eua-t yes bulk, 500 pieces/bag sip through hole a1323llhlt-t yes 7-in. reel, 3000 pieces/reel surface mount ?40 to 150 a1323lua-t yes bulk, 500 pieces/bag sip through hole 1 pb-based variants are being phased out of the product line. a. certain variants cited in this footnote are in production but have been determined to be last time buy. this classification indicates that sale of this device is currently restricted to existing customer applications. the device should not be purchased for new design applications because obsolescence in the near future is probable. samples are no longer available. status change: october 31, 2006. deadlilne for receipt of last time buy orders: apri l 27, 2007. these variants include: a1322elhlt, a1322eua, and a1323llhlt. b. certain variants cited in this footnote are in production but have been determined to be not for new design. this classifica tion indicates that sale of this device is currently restricted to existing customer applications. the device should not be purchased for new design application s because obsolescence in the near future is probable. samples are no longer available. status change: may 1, 2006. these variants include: a1321elhlt, a1321eua, a1321llhlt, a1321lua, a1322llhlt, a1322lua, a1323elhlt, a1323eua, and a1323lua. 2 contact allegro for additional packing options. absolute maximum ratings characteristic symbol notes rating units supply voltage v cc * additional current draw may be observed at voltages above the minimum supply zener clamp voltage, v z(min) , due to the zener diode turning on. 8v output voltage v out 8v reverse supply voltage v rcc ?0.1 v reverse supply voltage v rcc ?0.1 v output sink current i out 10 ma operating ambient temperature t a range e ?40 to 85 oc range l ?40 to 150 oc maximum junction temperature t j (max) 165 oc storage temperature t stg ?65 to 170 oc
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 3 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com device characteristics 1 over operating temperature (t a ) range, unless otherwise noted characteristic symbol test conditions min. typ. 2 max. units electrical characteristics; v cc = 5 v, unless otherwise noted supply voltage v cc(op) operating; tj < 165c 4.5 5.0 5.5 v supply current i cc b = 0, i out = 0 ? 5.6 8 ma quiescent voltage v out(q) b = 0, t a = 25oc, i out = 1 ma 2.425 2.5 2.575 v output voltage 3 v out(h) b = + x , i out = ?1 ma ? 4.7 ? v v out(l) b = ? x , i out = 1 ma ? 0.2 ? v output source current limit 3 i out(lm) b = ? x , v out 0 ?1.0 ?1.5 ? ma supply zener clamp voltage v z i cc = 11 ma = i cc(max) + 3 6 8.3 ? v output bandwidth bw ? 30 ? khz clock frequency f c ? 150 ? khz output characteristics; over v cc range, unless otherwise noted noise, peak-to-peak 4 v n a1321; c bypass = 0.1 f, no load ? ? 40 mv a1322; c bypass = 0.1 f, no load ? ? 25 mv a1323; c bypass = 0.1 f, no load ? ? 20 mv output resistance r out i out 1 ma ? 1.5 3 output load resistance r l i out 1 ma, vout to gnd 4.7 ? ? k output load capacitance c l vout to gnd ? ? 10 nf 1 negative current is de ned as conventional current coming out of (sourced from) the speci ed device terminal. 2 typical data is at t a = 25c. they are for initial design estimations only, and assume optimum manufacturing and application conditions. performance may vary for individual units, within the speci ed maximum and minimum limits. 3 in these tests, the vector x is intended to represent positive and negative elds suf cient to swing the output driver between fully off and saturated (on), respectively. it is not intended to indicate a range of linear operation. 4 noise speci cation includes both digital and analog noise.
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 4 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com magnetic characteristics 1,2 over operating temperature range, t a ; v cc = 5 v, i out = ?1 ma; unless otherwise noted characteristics symbol test condition min typ 3 max units 4 sensitivity 5 sens a1321; t a = 25oc 4.750 5.000 5.250 mv/g a1322; t a = 25oc 2.969 3.125 3.281 mv/g a1323; t a = 25oc 2.375 2.500 2.625 mv/g delta v out(q) as a func- tion of temperature v out(q)( t) de ned in terms of magnetic ux density, b ? ? 10 g ratiometry, v out(q) v out(q)( v) ? ? 1.5 % ratiometry, sens sens ( v) ? ? 1.5 % positive linearity lin+ ? ? 1.5 % negative linearity lin? ? ? 1.5 % symmetry sym ? ? 1.5 % ua package delta sens at t a = max 5 sens (tamax) from hot to room temperature ?2.5 ? 7.5 % delta sens at t a = min 5 sens (tamin) from cold to room temperature ?6 ? 4 % sensitivity drift 6 sens drift t a = 25c; after temperature cycling and over time ? 1 2 % lh package delta sens at t a = max 5 sens (tamax) from hot to room temperature ?5 ? 5 % delta sens at t a = min 5 sens (tamin) from cold to room temperature ?3.5 ? 8.5 % sensitivity drift 6 sens drift t a = 25c; after temperature cycling and over time ? 0.328 2 % 1 additional information on chracteristics is provided in the section characteristics de nitions, on the next page. 2 negative current is de ned as conventional current coming out of (sourced from) the speci ed device terminal. 3 typical data is at t a = 25c, except for sens, and at x.x sens. typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. performance may vary for individual units, within the speci ed maximum and minimum limits. in addition, the typical values vary with gain. 4 10 g = 1 millitesla. 5 after 150oc pre-bake and factory programming. 6 sensitivity drift is the amount of recovery with time.
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 5 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com quiescent voltage output. in the quiescent state (no magnetic eld), the output equals one half of the supply voltage over the operating voltage range and the operating temperature range. due to internal component tolerances and thermal con- siderations, there is a tolerance on the quiescent voltage output both as a function of supply voltage and as a function of ambient temperature. for purposes of speci cation, the quiescent voltage output as a function of temperature is de ned in terms of mag- netic ux density, b, as: this calculation yields the device?s equivalent accuracy, over the operating temperature range, in gauss (g). sensitivity. the presence of a south-pole magnetic eld per- pendicular to the package face (the branded surface) increases the output voltage from its quiescent value toward the supply voltage rail by an amount proportional to the magnetic eld applied. conversely, the application of a north pole will decrease the output voltage from its quiescent value. this proportionality is speci ed as the sensitivity of the device and is de ned as: the stability of sensitivity as a function of temperature is de ned as: characteristic de nitions ratiometric. the a132x family features a ratiometric output. the quiescent voltage output and sensitivity are proportional to the supply voltage (ratiometric). the percent ratiometric change in the quiescent voltage output is de ned as: and the percent ratiometric change in sensitivity is de ned as: linearity and symmetry. the on-chip output stage is designed to provide a linear output with a supply voltage of 5 v. although application of very high magnetic elds will not damage these devices, it will force the output into a non-linear region. linearity in percent is measured and de ned as: and output symmetry as: v out(q)( ?) v out(q)( ) v out(q)( 25 oc ) sens ( 25 oc ) ? = (1) 2 b v out(?b) v out(+b ) sens ? = sens ( ?) sens ( ) sens ( 25 oc ) sens ( 25 oc ) ? = 100 % (2) (3) v out(q)(v cc ) v out(q)(5v) v out(q)( v) = 100 % v cc 5v (4) v cc 5v = 100 % sens ( v ) sens (v cc ) sens ( 5 v ) (5) ? = 100 % lin+ v out(+b) 2( v out(+b / 2) ?v out(q) ) v out(q) (6) ? = 100 % lin? v out(?b) 2( v out(?b / 2) ?v out(q) ) v out(q) (7) ? = 100 % sym v out(+b) v out(q) ?v out(?b) v out(q) (8)
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 6 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com typical characteristics (30 pieces, 3 fabrication lots) average supply current (i cc )vstemperature v cc =5v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 -40 -20 0 25 85 115 125 150 t a (c) i cc (ma) average positive linearity (lin+) vs temperature v cc =5v 95 96 97 98 99 100 101 102 103 104 105 -40 -20 0 25 85 115 125 150 t a (c) lin+ (%) average negative linearity (lin?) vs temperature v cc =5v 95 96 97 98 99 100 101 102 103 104 105 -40 -20 0 25 85 115 125 150 t a (c) lin ? (%) average ratiometry, v out(q)( v) vs temperature 99 99.2 99.4 99.6 99.8 100 100.2 100.4 100.6 100.8 101 -40 -20 0 25 85 115 125 150 t a (c) ratiometry (%) 4.5 to 5.0 v 5.5 to 5.0 v average ratiometry, sens ( v), vs temperature 99 99.2 99.4 99.6 99.8 100 100.2 100.4 100.6 100.8 101 -40 -20 0 25 85 115 125 150 t a (c) ratiometry (%) 4.5 to 5.0v 5.5 to 5.0v continued on the next page...
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 7 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com typical characteristics, continued (30 pieces, 3 fabrication lots) average absolute quiescent output voltage, v out(q) , vs temperature v cc =5v 2.425 2.45 2.475 2.5 2.525 2.55 2.575 -40 -20 0 25 85 115 125 150 t a (c) v out(q) (v) average absolute sensitivity, sens, vs temperature v cc =5v 2 2.5 3 3.5 4 4.5 5 5.5 6 -40 -20 0 25 85 115 125 150 t a (c) sens (mv/g) a1322 a1321 a1323 average delta quiescent output voltage, v out(q)( t) , vs temperature in readings at each temperature are relative to 25c v cc =5v -10 -8 -6 -4 -2 0 2 4 6 8 10 -40 -20 0 25 85 115 125 150 t a (c) v out(q)( t) (g) quiescent output voltage, v out(q) ,vsv cc t a =25c 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 4.5 5 5.5 v cc (v) v out(q) (v) 1321 1322 1323 average sensitivity, sens, vs v cc t a = 25c 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 4.5 5 5.5 v cc (v) sens (mv/g) 1321 1322 1323 average delta sensitivity, sens, vs temperature in readings at each temperature are relative to 25c v cc =5v -10 -8 -6 -4 -2 0 2 4 6 8 10 -40 -20 0 25 85 115 125 150 t a (c) sens (%)
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 8 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com thermal characteristics may require derating at maximum conditions, see application information characteristic symbol test conditions* value units package thermal resistance r ja package lh, 1-layer pcb with copper limited to solder pads 228 oc/w package lh, 2-layer pcb with 0.463 in. 2 of copper area each side connected by thermal vias 110 oc/w package ua, 1-layer pcb with copper limited to solder pads 165 oc/w *additional thermal information available on allegro website. 6 5 4 3 2 1 0 20 40 60 80 100 120 140 160 180 temperature (oc) maximum allowable v cc (v) power derating curve (r q ja = 228 oc/w) 1-layer pcb, package lh (r q ja = 110 oc/w) 2-layer pcb, package lh (r q ja = 165 oc/w) 1-layer pcb, package ua v cc(min) v cc(max) 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 20 40 60 80 100 120 140 160 180 temperature (c) power dissipation, p d (mw) power dissipation versus ambient temperature (r q ja = 165 oc/w ) 1-layer pcb, package ua (r q ja = 228 oc/w) 1-layer pcb, pa ckag e lh (r q ja = 110 oc/w ) 2-layer pcb, package lh
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 9 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com power derating the device must be operated below the maximum junction temperature of the device, t j(max) . under certain combinations of peak conditions, reliable operation may require derating sup- plied power or improving the heat dissipation properties of the application. this section presents a procedure for correlating factors affecting operating t j . (thermal data is also available on the allegro microsystems web site.) the package thermal resistance, r ja , is a gure of merit sum- marizing the ability of the application and the device to dissipate heat from the junction (die), through all paths to the ambient air. its primary component is the effective thermal conductivity, k, of the printed circuit board, including adjacent devices and traces. radiation from the die through the device case, r jc , is relatively small component of r ja . ambient air temperature, t a , and air motion are signi cant external factors, damped by overmolding. the effect of varying power levels (power dissipation, p d ), can be estimated. the following formulas represent the fundamental relationships used to estimate t j , at p d . p d = v in i in (1) t = p d r ja (2) t j = t a + t (3) for example, given common conditions such as: t a = 25c, v cc = 12 v, i cc = 4 ma, and r ja = 140 c/w, then: p d = v cc i cc = 12 v 4 ma = 48 mw t = p d r ja = 48 mw 140 c/w = 7c t j = t a + t = 25c + 7c = 32c a worst-case estimate, p d(max) , represents the maximum allow- able power level (v cc(max) , i cc(max) ), without exceeding t j(max) , at a selected r ja and t a . example : reliability for v cc at t a = 150c, package ua, using minimum-k pcb. observe the worst-case ratings for the device, speci cally: r ja = 165c/w, t j(max) = 165c, v cc(max) = 5.5 v, and i cc(max) = 8 ma. calculate the maximum allowable power level, p d(max) . first, invert equation 3: t max = t j(max) ? t a = 165 c ? 150 c = 15 c this provides the allowable increase to t j resulting from internal power dissipation. then, invert equation 2: p d(max) = t max r ja = 15c 165 c/w = 91 mw finally, invert equation 1 with respect to voltage: v cc(est) = p d(max) i cc(max) = 91 mw 8 ma = 11.4 v the result indicates that, at t a , the application and device can dissipate adequate amounts of heat at voltages v cc(est) . compare v cc(est) to v cc(max) . if v cc(est) v cc(max) , then reli- able operation between v cc(est) and v cc(max) requires enhanced r ja . if v cc(est) v cc(max) , then operation between v cc(est) and v cc(max) is reliable under these conditions.
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 10 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com package lh, 3-pin; (sot-23w) terminal list symbol number description package lh package ua vcc 1 1 connects power supply to chip vout 2 3 output from circuit gnd 3 2 ground package lh package ua pin-out drawings 23 1 2 1 3 0.15 0.00 .006 .000 1.17 0.75 .046 .030 0.50 0.30 .020 .012 2.10 1.85 .083 .073 3.00 2.70 .118 .106 1.49 nom .059 0.96 nom .038 0.20 0.08 .008 .003 8o 0o 0.60 0.25 .024 .010 c seating plane a b 3x 0.20 [.008] m c a b 0.15 [.006] m c a b c 0.10 [.004] 3x 0.95 .037 1.90 .075 0.25 .010 3.04 2.80 .120 .110 2 1 3 gauge plane seating plane b a b preliminary dimensions, for reference only dimensions in millimeters u.s. customary dimensions (in.) in brackets, for reference only (reference jedec to-236 ab, except case width and terminal tip-to-tip) dimensions exclusive of mold flash, gate burrs, and dambar protrusions exact case and lead configuration at supplier discretion within limits shown hall element (not to scale) active area depth 0.28 [.011] a a a
ratiometric linear hall effect sensor for high-temperature operation a1321, a1322, and a1323 11 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com the products described herein are manufactured under one or more of the following u.s. patents: 5,045,920; 5,264,783; 5,442,28 3; 5,389,889; 5,581,179; 5,517,112; 5,619,137; 5,621,319; 5,650,719; 5,686,894; 5,694,038; 5,729,130; 5,917,320; and other patents pending. allegro microsystems, inc. reserves the right to make, from time to time, such de par tures from the detail spec i ca tions as may be required to permit improvements in the per for mance, reliability, or manufacturability of its products. before placing an order, the user is cautioned to verify that the information being relied upon is current. allegro products are not authorized for use as critical components in life-support devices or sys tems without express written approval. the in for ma tion in clud ed herein is believed to be ac cu rate and reliable. how ev er, allegro microsystems, inc. assumes no re spon si bil i ty for its use; nor for any in fringe ment of patents or other rights of third parties which may result from its use. copyright ? 2004, 2006, allegro microsystems, inc. package ua, 3-pin sip b d d d .164 .159 4.17 4.04 .122 .117 3.10 2.97 .062 .058 1.57 1.47 .017 .014 0.44 0.35 .019 .014 0.48 0.36 .640 .600 16.26 15.24 .085 max 2.16 .050 nom 1.27 .031 ref 0.79 .0805 nom 2.04 1.44 .0565 nom dimensions in inches metric dimensions (mm) in brackets, for reference only 23 1 a a b c c dambar removal protrusion (6x) active area depth .0195 [0.50] nom d hall element (not to scale) ejector mark on opposite side

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